c opyright ruichips semiconductor co . , ltd rev . a C sep ., 201 2 www. ruichips .com ru 75 26 0q n - channel advanced power mosfet mosfet features pin description applications symbol parameter rating unit common ratings ( t c =25 c unless otherwise noted) v dss drain - source voltage 75 v v gss gate - source voltage 2 5 t j maximum junction temperature 175 c t stg storage temperature range - 55 to 175 c i s diode continuous forward current t c =25 c 26 0 a mounted on large heat sink i d p 300 s pulse drain current tested t c =25 c 1040 a i d continuous drain current ( v gs =10v) t c =25 c 260 a t c =100 c 189 p d maximum power dissipation t c =25 c 428 w t c =100 c 214 r q jc thermal resistance - junction to case 0.3 5 c /w drain - source avalanche ratings e as avalanche energy, single pulsed 900 m j ? 75 v/ 260 a, r ds ( on ) = 2.8 m ( t y p .)@ v gs =10v ? super high dense cell design ? ultra low on - resistance ? reliable and rugged ? 100% avalanche tested ? lead free and green devices available ( rohs compliant) ? high speed power switching ? ups absolute maximum ratings n - channel mosfe t to - 247
c opyright ruichips semiconductor co . , ltd rev . a C sep ., 201 2 2 www. ruichips .com ru 7526 0q electrical characteristics ( t c =25 c unless otherwise noted) symbol parameter test condition ru 7526 0 q unit min. typ. max. static characteristics bv dss drain - sou rce breakdown voltage v gs =0v, i ds =250 m a 75 v i dss zero gate voltage drain current v ds = 75 v, v gs =0v 1 m a t j =85 c 30 v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 2 3 4 v i gss gate leakage current v gs = 25 v, v ds =0v 10 0 n a r ds ( on ) drain - source on - state resistance v gs = 10 v, i ds = 75 a 2.8 3.5 m w notes : calculated continuous current based on maximum allowable junction temperature . package limitation current is 90 a. pulse width limited by safe operating area. limited by t jmax , i as = 60 a, v dd = 48 v, r g = 50 , starting t j = 25c . pulse test ; p ulse width 3 00 m s, duty cycle 2% . guaranteed by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = 75 a, v gs =0v 1. 2 v t rr reverse recovery time i sd = 75 a, dl sd /dt=100a/ m s 45 ns q rr reverse recovery charge 82 nc dynamic characte ristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1. 2 w c iss input capacitance v gs =0v, v ds = 37.5 v, frequency=1.0mhz 9800 pf c oss output capacitance 860 c rss reverse transfer capacitance 540 t d ( on ) turn - on delay time v dd = 37.5 v, r l = 0.5 w , i ds = 7 5 a, v gen =10v, r g = 6 w 26 ns t r turn - on rise time 98 t d ( off ) turn - off delay time 87 t f turn - off fall time 72 gate charge characteristics q g total gate charge v ds = 60 v, v gs = 10v, i ds = 75 a 1 70 nc q gs gate - source charge 52 q gd gate - drai n charge 64
c opyright ruichips semiconductor co . , ltd rev . a C sep ., 201 2 3 www. ruichips .com ru 7526 0q typical characteristics power dissipation drain current p tot - power ( w) i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance - i d - drain current (a) normalized effective transient - v ds - drain - source vo ltage (v) square wave pulse duration ( sec)
c opyright ruichips semiconductor co . , ltd rev . a C sep ., 201 2 4 www. ruichips .com ru 7526 0q typical characteristics output characteristics drain - source on resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current ( a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev . a C sep ., 201 2 5 www. ruichips .com ru 7526 0q typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source current (a) t j - junction tempe rature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconductor co . , ltd rev . a C sep ., 201 2 6 www. ruichips .com ru 7526 0q avalanche test circuit a nd waveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev . a C sep ., 201 2 7 www. ruichips .com ru 7526 0q ordering and marking information device marking package packaging quantity reel size tape width ru 7526 0q ru 7526 0q to - 247 tube 30 - -
c opyright ruichips semiconductor co . , ltd rev . a C sep ., 201 2 8 www. ruichips .com ru 7526 0q package information to - 247 all dimensions refer to jedec standard do not include mold flash or protrusions symbol mm inch symbol mm inch min max min max min max min max a 4.850 5.150 0,191 0.200 e 2 3.600 ref 0.142 ref a1 2.200 2.600 0.087 0.102 l 40.900 41.300 1.610 1.626 b 1.000 1.4 00 0.039 0.055 l1 24.800 25.100 0.976 0.988 b1 2.800 3.200 0.110 0.126 l2 20.300 20.600 0.799 0.811 b2 1.800 2.200 0.071 0.087 7.100 7.300 0.280 0.287 c 0.500 0.700 0.020 0.028 e 5.450 typ 0.215 typ c 1 1.900 2.100 0.075 0.083 h 5.980 ref. 0.235 ref. d 15.450 15.750 0.608 0.620 h 0.000 0.300 0.000 0.012 e1 3.500 ref. 0.138 ref.
c opyright ruichips semiconductor co . , ltd rev . a C sep ., 201 2 9 www. ruichips .com ru 7526 0q customer service worldwide sales and service : sales@ru i chips.com tec hnical s upport : technical@ruichips.com investor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : ( 86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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